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| STGB10NB40LZ N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESHTM IGBT TYPE STGB10NB40LZ s s s s s s VCES CLAMPED VCE(sat) < 1.8 V IC 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 D2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s AUTOMOTIVE IGNITION ORDERING INFORMATION SALES TYPE STGB10NB40LZT4 MARKING GB10NB40LZ PACKAGE D2PAK PACKAGING TAPE & REEL August 2003 1/10 STGB10NB40LZ ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) Eas PTOT ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25C Collector Current (continuos) at TC = 100C Collector Current (pulsed) Single Pulse Energy Tc = 25C Total Dissipation at TC = 25C Derating Factor ESD (Human Body Model) Storage Temperature Operating Junction Temperature Value CLAMPED 18 CLAMPED 20 10 40 300 150 1 4 - 55 to 175 Unit V V V A A A mJ W W/C KV C ( )Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1 62.5 C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol BV(CES) BV(ECR) BVGE ICES IGES RGE Parameter Clamped Voltage Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistance Test Conditions IC = 2 mA, VGE = 0, Tj= - 40C to 150C IC = 75 mA, Tj= 25C IG = 2 mA VCE = 15 V, VGE= 0 ,Tj= 150 C VCE= 200 V, VGE= 0 ,Tj= 150C VGE = 10V , VCE = 0 20 Min. 380 18 12 16 10 100 700 Typ. 410 Max. 440 Unit V V V A A A K ON (1) Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250 A, TC= - 40C to 150C VGE =4.5V, IC = 10 A, Tj= 25C VGE =4.5V, IC = 20 A, Tj= 25C Min. 0.6 1.2 1.3 Typ. Max. 2.2 1.8 Unit V V V 2/10 STGB10NB40LZ ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs Cies Coes Cres Qg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge VCE = 328V, IC = 10 A, VGE = 5V Test Conditions VCE = 15 V , IC= 10 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 18 1300 105 12 28 Max. Unit S pF pF pF nC FUNCTIONAL CHARACTERISTICS Symbol II U.I.S. Parameter Latching Current Functional Test Open Secondary Coil Test Conditions VClamp = 328 V, TC = 125 C RGOFF = 1K , VGE = 5 V RGOFF = 1K , L = 1 mH , Tc= 125C 13 Min. Typ. 40 Max. Unit A A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 328 V, IC = 10 A RG = 1K , VGE = 5 V VCC= 328 V, IC = 10 A RG=1K, VGE = 5 V VCC= 328 V, IC = 10 A, TC= 25 C RG = 1K, VGE = 5 V, TC= 125 C Min. Typ. 1300 270 60 2.4 2.6 Max. Unit ns ns A/s mJ mJ SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) tc tr(Voff) td(off) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Vcc = 328 V, IC = 10 A, RGE = 1K , VGE = 5 V Tj = 125 C Test Conditions Vcc = 328 V, IC = 10 A, RGE = 1K , VGE = 5 V Min. Typ. 3.6 2 8 1.4 5 5.7 2.7 9.2 2.8 8.7 Max. Unit s s s s mJ s s s s mJ (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail 3/10 STGB10NB40LZ Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current 4/10 STGB10NB40LZ Gate Threshold vs Temperature Normalized Clamping Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature 5/10 STGB10NB40LZ Total Switching Losses vs Collector Current Thermal Impedance Turn-Off SOA 6/10 STGB10NB40LZ Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit 7/10 STGB10NB40LZ D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 8/10 3 1 STGB10NB40LZ D PAK FOOTPRINT 2 TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 9/10 STGB10NB40LZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 10/10 |
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